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Improved flash memory grows in popularityLAWTON, George.Computer (Long Beach, CA). 2006, Vol 39, Num 1, pp 16-18, issn 0018-9162, 3 p.Article

Flash Storage MemoryLEVENTHAL, Adam.Communications of the ACM. 2008, Vol 51, Num 7, pp 47-51, issn 0001-0782, 5 p.Article

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The Five-Minute Rule 20 Years Later (and How Flash Memory Changes the Rules)GRAEFE, Goetz.Communications of the ACM. 2009, Vol 52, Num 7, pp 48-59, issn 0001-0782, 12 p.Article

l'avènement des mémoires flash = The advent of the flash memoriesMARTIN, Gabriel.Recherche (Paris, 1970). 2004, Num 375, pp 84-85, issn 0029-5671, 2 p.Article

Test and repair of non-volatile commodity and embedded memories (NAND flash memory )SHIROTA, Riichiro.Proceedings - International Test Conference. 2002, issn 1089-3539, isbn 0-7803-7542-4, p. 1221Conference Paper

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Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memoryCHU, Wen-Ting; LIN, Hao-Hsiung; TU, Yeur-Luen et al.IEEE electron device letters. 2004, Vol 25, Num 9, pp 616-618, issn 0741-3106, 3 p.Article

Graded Bit-Error-Correcting Codes With Applications to Flash MemoryGABRYS, Ryan; YAAKOBI, Eitan; DOLECEK, Lara et al.IEEE transactions on information theory. 2013, Vol 59, Num 4, pp 2315-2327, issn 0018-9448, 13 p.Article

What the Future Holds for Solid-State MemorySTRAUSS, Karin; BURGER, Doug.Computer (Long Beach, CA). 2014, Vol 47, Num 1, pp 24-31, issn 0018-9162, 8 p.Article

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Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High-k Trapping LayerGANG ZHANG; WANG, Xin-Peng; WON JONG YOO et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 12, pp 3317-3324, issn 0018-9383, 8 p.Article

Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memoryWU, Meng-Yi; DAI, Sheng-Huei; LEE, Kung-Hong et al.Solid-state electronics. 2006, Vol 50, Num 3, pp 309-315, issn 0038-1101, 7 p.Article

Data retention of silicon nanocrystal storage nodes programmed with short voltage pulsesPUZZILLI, Giuseppina; IRRERA, Fernanda.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 4, pp 775-781, issn 0018-9383, 7 p.Article

A new non-volatile memory architecture embedding microbatteries to improve data retention criterionPOSTEL-PELLERIN, J; CHIQUET, P; LALANDE, F et al.Solid-state electronics. 2014, Vol 101, pp 79-84, issn 0038-1101, 6 p.Conference Paper

Embedded Flash on a Low-Power 65-nm Logic TechnologyFONG, S; ARIYOSHI, J; EMA, T et al.IEEE electron device letters. 2012, Vol 33, Num 9, pp 1261-1263, issn 0741-3106, 3 p.Article